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参数资料
| 型号： | 2SB945R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 129K |
| 代理商： | 2SB945R |
Power Transistors
1
Publication date: February 2003
SJD00024BED
2SB0945 (2SB945)
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1270
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with one screw.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 10 mA, IB = 0
80
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 100 V, I
E
= 0
10
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
50
A
Forward current transfer ratio
hFE1
VCE = 2 V, IC = 0.1 A
45
hFE2 *
VCE
= 2 V, I
C
= 2 A
60
260
Collector-emitter saturation voltage
VCE(sat)
IC = 4 A, IB = 0.2 A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC = 4 A, IB = 0.2 A
1.5
V
Transition frequency
fT
VCE
= 10 V, I
C
= 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = 2 A, IB1 = 0.2 A, IB2 = 0.2 A
0.13
s
Storage time
tstg
VCC = 50 V
0.50
s
Fall time
tf
0.13
s
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
130
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
5A
Peak collector current
ICP
10
A
Collector power
PC
40
W
dissipation
Ta = 25°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Note) The part number in the parenthesis shows conventional part number.
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB946 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB946A | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistor |
| 2SB946P | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB946PQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 7A I(C) | SC-67 |
| 2SB946Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 7A I(C) | SC-67 |
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