- 您现在的位置：买卖IC网 > PDF目录31654 > 2SB952AP (PANASONIC CORP) 7 A, 40 V, PNP, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SB952AP |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 封装： | N-G1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 252K |
| 代理商： | 2SB952AP |
Power Transistors
1
Publication date: March 2003
SJD00031AED
2SB0952 (2SB952), 2SB0952A (2SB952A)
Silicon PNP epitaxial planar type
For low-voltage switching
■ Features
Low collector-emitter saturation voltage V
CE(sat)
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T
C
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB0952
VCBO
40
V
(Emitter open)
2SB0952A
50
Collector-emitter voltage 2SB0952
VCEO
20
V
(Base open)
2SB0952A
40
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
7A
Peak collector current
ICP
12
A
Collector power dissipation
PC
30
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB0952
VCEO
IC = 10 mA, IB = 0
20
V
(Base open)
2SB0952A
40
Collector-base cutoff
2SB0952
ICBO
VCB = 40 V, IE = 0
50
A
current (Emitter open)
2SB0952A
VCB = 50 V, IE = 0
50
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
50
A
Forward current transfer ratio
hFE1
VCE = 2 V, IC = 0.1 A
45
hFE2 *
VCE = 2 V, IC = 2 A
60
260
Collector-emitter saturation voltage
VCE(sat)
IC = 5 A, IB = 0.16 A
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC = 5 A, IB = 0.16 A
1.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
150
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
140
MHz
(Common base, input open circuited)
Turn-on time
ton
IC = 2 A
0.1
s
Storage time
tstg
IB1 = 66 mA, IB2 = 66 mA
0.5
s
Fall time
tf
VCC
= 20 V
0.1
s
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
N-G1 Package
8.5±0.2
3.4±0.3
1.0±0.1
0 to 0.4
6.0±0.2
0.8±0.1 R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
(8.5)
(6.5)
(6.0)
1.3
(1.5)
(7.6)
2.54±0.3
1.4±0.1
5.08±0.5
123
1.5
±
0.1
2.0
±
0.5
10.0
±
0.3
1.5
+0 –0.4
3.0
+0.4 –0.2
4.4
±
0.5
4.4
±0
.5
14.4
±
0.5
Note) Self-supported type package is also prepared.
Note) The part numbers in the parenthesis show conventional part number.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB985-AJ | 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 2SB1131-AF | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 2SD826-SA | 5 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SB892-AE | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 2SB1127-RA | 5 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-126 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB952AQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 7A I(C) | SOT-186 |
| 2SB952AR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 7A I(C) | SOT-186 |
| 2SB952P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 7A I(C) | SOT-186 |
| 2SB952Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 7A I(C) | SOT-186 |
| 2SB952R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 7A I(C) | SOT-186 |
发布紧急采购，3分钟左右您将得到回复。