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参数资料
| 型号： | 2SB956S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MINIP3-F1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 162K |
| 代理商： | 2SB956S |
SJC00062BED
Transistor
2SB0956 (2SB956)
Silicon PNP epitaxial plan
ar type
For low-frequency power amplification
Complementary to 2SD1280
s Features
q
Large collector power dissipation PC.
q
Low collector to emitter saturation voltage VCE(sat).
q
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
MiniP3-F1 Package
4.5±0.1
3.0±0.15
45
°
2.6
±0.1
0.4
max.
1.6±0.2
1.5±0.1
4.0
2.5
±0.1
3
°
+0.25 –0.20
1.0
+0.1 –0.2
0.5±0.08
0.4±0.04
0.4±0.08
1
2
3
1.5±0.1
3
°
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
*
Tj
Tstg
Ratings
–20
–5
–2
–1
1
150
–55 ~ +150
Unit
V
A
W
C
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCEO
VEBO
hFE1
*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –10V, IE = 0
IC = –1mA, IB = 0
IE = –10A, IC = 0
VCE = –2V, IC = –500mA
*2
VCE = –2V, IC = –1.5A
*2
IC = –1A, IB = –50mA
*2
IC = –500mA, IB = –50mA
*2
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –6V, IE = 0, f = 1MHz
min
–20
–5
130
50
typ
200
40
max
–1
280
– 0.5
–1.2
Unit
A
V
MHz
pF
*1h
FE1 Rank classification
Rank
R
S
hFE1
130 ~ 210
180 ~ 280
Marking Symbol
HR
HS
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Marking symbol :
H
*2 Pulse measurement
Note.) The Part number in the Parenthesis shows conventional
part number.
1
Publication date: August 2002
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PDF描述 |
|---|---|
| 2SB963-Z-T2M | Si, POWER TRANSISTOR |
| 2SB963-Z-T1K | Si, POWER TRANSISTOR |
| 2SB963-Z-T2K | Si, POWER TRANSISTOR |
| 2SB963-Z | 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| 2SB963-ZM | 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
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