参数资料
型号: 2SB963-ZL
元件分类: 功率晶体管
英文描述: 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-252AA
封装: TO-252, MP-3Z, 3 PIN
文件页数: 4/4页
文件大小: 666K
代理商: 2SB963-ZL
2SK4136
No. A0998-4/4
PS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
-
V
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
Case Temperature, Tc --
°C
Allowable
Power
Dissipation,
P
D
-
W
A S O
VGS -- Qg
PD -- Tc
EAS -- Ta
A
valanche
Ener
gy
derating
factor
--
%
Ambient Temperature, Ta --
°C
025
20
10
15
5
3
10
0
1
4
IT12335
8
9
5
6
7
2
0
25
50
75
100
125
150
100
80
60
20
40
120
175
IT10478
VDS=200V
ID=8A
IT13119
0.01
0.1
2
3
5
7
2
1.0
3
5
7
2
0.1
10
s
100
s
100ms
10ms
1ms
DC
operation
1.0
10
100
23
5 7
23
5 7
7
2
1000
35
2 3
5 7
10
3
5
7
2
3
5
ID=8A
Operation in
this area is
limited by RDS(on).
IDP=32A
0
20
40
60
80
100
140
120
20
80
70
60
100
40
160
IT13106
PW
≤10
s
Tc=25
°C
Single pulse
Note on usage : Since the 2SK4136 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of December, 2007. Specifications and information herein are subject
to change without notice.
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相关代理商/技术参数
参数描述
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