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参数资料
| 型号： | 2SB986-S |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封装： | TO-126, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 37K |
| 代理商： | 2SB986-S |
2SB986 / 2SD1348
No.1245-1/4
Applications
Power supplies, relay drivers, lamp drivers, electrical equipment.
Features
Adoption of FBET and MBIT processes.
Low saturation voltage.
Large current capacity and wide ASO.
Specifications ( ) : 2SB986
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)60
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)4
A
Collector Current (Pulse)
ICP
(--)6
A
Collector Dissipation
PC
1.2
W
Tc=25
°C10
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)1.0
mA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)1.0
mA
DC Current Gain
hFE1VCE=(--)2V, IC=(--)100mA
100*
560*
hFE2VCE=(--)2V, IC=(--)3A
40
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)50mA
150
MHz
Output Capacitance
Cob
VCB=(--)10V
(39)25
pF
Continued on next page.
* : The 2SB986 / 2SD1348 are classified by 100mA hFE as follows :
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN1245D
80906EA MS IM / 11504TN (KT) / 92098HA (KT) / 10966TS (KOTO) X-6510 / 4107KI / D12MW, TS
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SB986 / 2SD1348
PNP / NPN Epitaxial Planar Silicon Darlington Transistors
50V / 4A Switching Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1348-T | 4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD1348-R | 4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SB986-U | 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SC1009A-FA3 | 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC1009A | 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB986T | 制造商:SANYO 功能描述:TRANSISTOR, PNP, 50V, 4A, TO-126 Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 50V 4A TO-126 |
| 2SB986U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-126 |
| 2SB987 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 500MA I(C) | TO-92VAR |
| 2SB988 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB -60V -3A 30W BCE |
| 2SB99 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-5 -30V -.05A .125W |
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