参数资料
型号: 2SB987
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: SC-51, TO-92L, 3 PIN
文件页数: 1/3页
文件大小: 167K
代理商: 2SB987
1
Transistor
2SB987
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD1211
s Features
q
Extremely satisfactory linearity of the forward current transfer
ratio hFE.
q
High transition frequency fT.
q
Makes up a complementary pair with 2SD1211, which is opti-
mum for the pre-driver stage of a 40 to 60W output amplifier.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
5.9
±0.2
2.54
±0.15
0.7
±0.1
4.9
±0.2
8.6
±
0.2
0.7
+0.3
–0.2
13.5
±
0.5
3.2
0.45
+0.2
–0.1
1.27
0.45
+0.2
–0.1
13
2
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–120
–5
–1
– 0.5
1
150
–55 ~ +150
Unit
V
A
W
C
s Electrical Characteristics (Ta=25C)
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
VCEO
VEBO
hFE1
*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
IC = –0.1mA, IB = 0
IE = –10A, IC = 0
VCE = –10V, IC = –150mA
*2
VCE = –5V, IC = –500mA
*2
IC = –300mA, IB = –30mA
*2
IC = –300mA, IB = –30mA
*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–120
–5
90
50
typ
250
max
220
–1.0
–1.2
30
Unit
V
MHz
pF
*1h
FE1 Rank classification
Rank
Q
R
hFE1
90 ~ 155
130 ~ 220
*2 Pulse measurement
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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