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参数资料
| 型号： | 2SC1212A |
| 厂商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件页数： | 2/5页 |
| 文件大小： | 29K |
| 代理商： | 2SC1212A |
2SC1212, 2SC1212A
2
Electrical Characteristics
(Ta = 25°C)
2SC1212
2SC1212A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
50
—
—
80
—
—
V
I
C
= 1 mA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
50
—
—
80
—
—
V
I
C
= 10 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
4
—
—
4
—
—
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
—
—
5
—
—
5
μ
A
V
CB
= 50 V, I
E
= 0
V
CE
= 4 V, I
C
= 50 mA
V
= 4 V, I
C
= 1 A
(pulse test)
DC current tarnsfer ratio h
FE
*
1
60
—
200
60
—
200
h
FE
20
—
—
20
—
—
Base to emitter voltage
V
BE
V
CE(sat)
—
0.65
1.0
—
0.65
1.0
V
V
CE
= 4 V, I
C
= 50 mA
I
= 1 A, I
B
= 0.1 A
(pulse test)
Collector to emitter
saturation voltage
—
0.75
1.5
—
0.75
1.5
V
Gain bandwidth product f
T
Note:
1. The 2SC1212 and 2SC1212A are grouped by h
FE
as follows.
—
160
—
—
160
—
MHz
V
CE
= 4 V, I
C
= 30 mA
B
C
60 to 120
100 to 200
1.0
0.75
0.5
0.25
0
50
100
200
150
Ambient temperature Ta (
°
C)
C
C
Maximum Collector Dissipation Curve
12
8
4
0
50
100
150
Case temperature T
C
(
°
C)
C
C
Maximum Collector Dissipation Curve
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC1213 | 制造商:n/a 功能描述:2SC1213 N9H1C/N7D4A NOTES |
| 2SC1213_11 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| 2SC1213A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9250V .5A .4W ECB |
| 2SC1213A(K) | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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