参数资料
型号: 2SC1213AK
厂商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件页数: 2/8页
文件大小: 43K
代理商: 2SC1213AK
2SC1213A (K)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
50
V
Collector to emitter voltage
50
V
Emitter to base voltage
4
V
Collector current
500
mA
Collector power dissipation
400
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
50
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
V
I
C
= 1.0 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
4
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE
*
1
h
FE
V
BE
V
CE(sat)
0.5
μ
A
V
CB
= 20 V, I
E
= 0
V
CE
= 3 V, I
C
= 10 mA
V
CE
= 3 V, I
C
= 500 mA*
2
V
CE
= 3 V, I
C
= 10 mA
I
C
= 150 mA, I
B
= 15 mA*
2
DC current transfer ratio
60
320
10
Base to emitter voltage
0.64
V
Collector to emitter saturation
voltage
0.12
0.6
V
Base to emitter satruation
voltage
V
BE(sat)
0.83
1.2
V
I
C
= 150 mA, I
B
= 15 mA*
2
Collector output capacitance
Cob
7.0
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 3 V, I
C
= 10 mA
V
CC
= 10.3 V
I
C
= 10 I
B1
= –10 I
B2
= 10 mA
Gain bandwidth product
f
T
t
on
120
MHz
Turn on time
0.25
μ
S
Turn off time
t
off
t
stg
0.85
μ
S
μ
S
Storage time
0.4
V
CC
= 5 V
I
C
= I
B1
= –I
B2
= 20 mA
Notes: 1. The 2SC1213A(K) is grouped by h
FE
as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
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