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参数资料
| 型号： | 2SC1515(K) |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92 (1), 3 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 42K |
| 代理商： | 2SC1515(K) |
Data Sheet P15660EJ1V0DS
6
2SC5800
VCE = 1 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
20
15
5
10
0
1
10
100
MAG
MSG
|S21e|
2
VCE = 1 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
15
10
0
5
–5
1
10
100
MAG
|S21e|
2
VCE = 2 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
20
15
5
10
0
1
10
100
MAG
MSG
|S21e|
2
VCE = 2 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
15
10
0
5
–5
1
10
100
MAG
|S21e|
2
VCE = 2 V
f = 4 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
10
5
–5
0
–10
1
10
100
MSG
|S21e|
2
VCE = 1 V
f = 4 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
10
5
–5
0
–10
1
10
100
MAG
MSG
|S21e|
2
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC1515(K) | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1515KTZ | 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1515K | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1515K | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1545M/A | 300 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC1515KTZ | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Triple Diffused |
| 2SC1516 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SC1518 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For high-frequency bias oscillation of tape recorders) |
| 2SC15180R | 功能描述:TRANS NPN 20VCEO 1A TO-92L RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC1518Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | TO-92VAR |
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