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参数资料
| 型号： | 2SC1741ASTP/Q |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SPT, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 91K |
| 代理商： | 2SC1741ASTP/Q |
Medium Power Transistor (50V,0.5A)
2SC1741AS
Symbol
V
CBO
V
CEO
V
EBO
I
C
PC
Tj
Tstg
Limits
50
5
0.5
0.3
150
-55 to +150
Unit
V
A
W
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
f
T
Cob
50
5
-
120
-
250
6.5
-
0.5
390
-
V
-
MHz
pF
IC=1mA
VCB=30V
VEB=4V
VCE/IC=3V/0.1A
VCE=5V , IE=-20mA , f=100MHz
VCB=10V , IE=0A , f=1MHz
Transistors
2SC1741AS
C
A
IC=100 A
IE=100 A
A
1/2
Parameter
Transition frequency
Output capacitance
V
CE(sat)
-
0.4
V
IC/IB=150mA/15mA
Electrical characteristics (Ta=25 C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Collector power dissipation
Junction temperature
Storage temperature
Absolute maximum rationgs (Ta=25 C)
Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pleces)
2SC1741AS
SPT
QR
TP
5000
Marking
-
Features
1) High current.(IC=5A)
2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter cutoff current
DC current rransfer ratio
Collector-emitter saturation voltage
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC1741ASTPR | 功能描述:两极晶体管 - BJT TRANS GP BJT NPN 50V 0.5A 3PIN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC1741S | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC1741S/Q | 制造商:ROHM Semiconductor 功能描述:500 MA, 32 V, NPN, SI, SMALL SIGNAL TRANSISTOR, SPT |
| 2SC1741SQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 500MA I(C) | SPAK |
| 2SC1741SR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 500MA I(C) | SPAK |
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