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参数资料
| 型号： | 2SC1815-Y |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 1/4页 |
| 文件大小： | 602K |
| 代理商： | 2SC1815-Y |
2SC1815
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
High voltage and high current: VCEO = 50 V (min),
IC = 150 mA (max)
Excellent hFE linearity: hFE (2) = 100 (typ.)
at VCE = 6 V, IC = 150 mA
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA)
= 0.95 (typ.)
Low noise: NF = 1dB (typ.) at f = 1 kHz
Complementary to 2SA1015 (O, Y, GR class)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
50
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
hFE (1)
(Note)
VCE = 6 V, IC = 2 mA
70
700
DC current gain
hFE (2)
VCE = 6 V, IC = 150 mA
25
100
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Base-emitter saturation voltage
VBE (sat)
IC = 100 mA, IB = 10 mA
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2.0
3.5
pF
Base intrinsic resistance
rbb’
VCE = 10 V, IE = 1 mA
f
= 30 MHz
50
Ω
Noise figure
NF
VCE = 6 V, IC = 0.1 mA
f
= 1 kHz, RG = 10 kΩ
1.0
10
dB
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC1815-Y | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1815 | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1815-O | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1815-GR | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1815G-Y-T92-B | 150 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC1815-Y(F) | 制造商:Toshiba 功能描述:NPN 50V 0.15A 120 to 240 TO92 Bulk |
| 2SC1815-Y(T) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 50V 0.15A 3-Pin TO-92 T/R |
| 2SC1815-Y(TE2,F,T) | 功能描述:两极晶体管 - BJT x34 Small Signal Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC1815-Y(TE2,T) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 50V 0.15A 3-Pin TO-92 T/R |
| 2SC1815-Y(TE2T) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR TO-92 |
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