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参数资料
| 型号： | 2SC1846S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 35 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封装： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 250K |
| 代理商： | 2SC1846S |
Power Transistors
1
Publication date: February 2003
SJD00094BED
2SC1846
Silicon NPN epitaxial planar type
For medium output power amplification
Complementary to 2SA0885
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Output of 3 W can be obtained by a complementary pair with
2SA0885
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 1 mA, IE = 045
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 035
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 20 V, I
E
= 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 20 V, IB = 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 010
A
Forward current transfer ratio
hFE1 *
VCE
= 10 V, I
C
= 500 mA
85
340
hFE2
VCE = 5 V, IC = 1 A
50
Collector-emitter saturation voltage
VCE(sat)
IC = 500 mA, IB = 50 mA
0.5
V
Transition frequency
fT
VCB
= 10 V, I
E
= 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
20
pF
(Common base, input open circuited)
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1
1.76±0.1
123
φ 3.16±0.1
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
45
V
Collector-emitter voltage (Base open)
VCEO
35
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
1.2
W
5.0 *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) *: With a 100
× 100 × 2 mm Al heat sink
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC1847 | 制造商:DISCRETE SEMI 功能描述: |
| 2SC18470Q | 功能描述:TRANS NPN HF 40VCEO 1.5A TO-126 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC1847P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SC1847Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SC1847R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
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