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参数资料
| 型号： | 2SC2003M |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | TO-92 |
| 中文描述： | 晶体管|晶体管|叩| 80V的五（巴西）总裁| 300mA的一（c）|至92 |
| 文件页数： | 2/5页 |
| 文件大小： | 23K |
| 代理商： | 2SC2003M |
2SC1890, 2SC1890A
2
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Symbol
2SC1890
2SC1890A
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
90
120
V
Collector to emitter voltage
90
120
V
Emitter to base voltage
5
5
V
Collector current
50
50
mA
Collector power dissipation
300
300
mW
Junction temperature
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SC1890
2SC1890A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to emitter
breakdown voltage
V
(BR)CEO
90
—
—
120
—
—
V
I
C
= 1 mA, R
BE
=
∞
Collector cutoff current
I
CBO
—
—
0.5
—
—
—
μ
A
μ
A
V
CB
= 75 V, I
E
= 0
V
CB
= 100 V, I
E
= 0
V
CE
= 12 V, I
C
= 2 mA
V
CE
= 12 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
—
—
—
—
—
0.5
DC current tarnsfer ratio h
FE
*
1
Base to emitter voltage
250
—
1200
250
—
1200
V
BE
V
CE(sat)
—
—
0.75
—
—
0.75
V
Collector to emitter
saturation voltage
—
—
0.5
—
—
0.5
V
Gain bandwidth product f
T
Collector output
capacitance
—
200
—
—
200
—
MHz
V
CE
= 12 V, I
C
= 2 mA
V
= 25 V, I
E
= 0,
f = 1 MHz
Cob
—
1.6
—
—
1.6
—
pF
Noise figure
NF
—
2
10
—
2
10
dB
V
CE
= 6 V, I
= 50
μ
A,
R
g
= 50 k
, f = 1 kHz
Note:
1. The 2SC1890/A is grouped by h
FE
as follows.
D
E
F
250 to 500
400 to 800
600 to 1200
See characteristic curves of 2SC1775 and 2SC1775A.
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