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参数资料
| 型号： | 2SC2206 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Silicon NPN epitaxial planer type(For high-frequency amplification) |
| 中文描述： | 30 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | M-A1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 224K |
| 代理商： | 2SC2206 |
1
Transistors
Publication date: January 2003
SJC00111BED
2SC2206
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1254
■ Features
Optimum for RF amplification of FM/AM radios
High transition frequency f
T
M type package allowing easy automatic and manual insertion
as well as stand-alone fixing to the printed circuit board
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
30
mA
Peak collector current
ICP
60
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 030
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 020
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 05
V
Base-emitter voltage
VBE
VCE
= 10 V, I
C
= 1 mA
0.7
V
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 1 mA
70
220
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 1 mA
0.1
V
Transition frequency
fT
VCB
= 10 V, I
E
= 1 mA, f = 200 MHz
150
300
MHz
Noise figure
NF
VCB = 10 V, IE = 1 mA, f = 5 MHz
2.8
4
dB
Common-emitter reverse transfer
Cre
VCB = 10 V, IE = 1 mA, f = 10.7 MHz
1.5
pF
capacitance
Reverse transfer impedance
Zrb
VCB = 10 V, IE = 1 mA, f = 2 MHz
50
Unit: mm
■ Electrical Characteristics T
a
= 25°C ± 3°C
1: Base
2: Collector
3: Emitter
M-A1 Package
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
21
3
R 0.7
R 0.9
(0.4)
3.5
±
0.1
4.5
±
0.1
4.1
±
0.2
2.4
±
0.2
1.25
±
0.05
2.0
±
0.2
1.0
±
0.1
(1.5)
Rank
B
C
hFE
70 to 140
110 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2206B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | SC-71 |
| 2SC2206C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | SC-71 |
| 2SC2209 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SC2209P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SC2209Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
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