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参数资料
| 型号： | 2SC2223-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | MINIMOLD PACKAGE-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 222K |
| 代理商： | 2SC2223-A |
Data Sheet D15601EJ2V0DS
2
2SC4810
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = 5 A, IB = 5 mA, L = 180
H
100
V
Collector to emitter voltage
VCEX(SUS)
IC = 5 A, IB = 5 mA
L = 180
H, clamped
100
V
Collector cutoff current
ICBO
VCB = 100 V, IE = 0
1.0
A
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
5.0
mA
DC current gain
hFE1*VCE = 2.0 V, IC = 2.0 A
2,000
20,000
DC current gain
hFE2*VCE = 2.0 V, IC = 4.0 A
500
Collector saturation voltage
VCE(sat)*IC = 2.0 A, IB = 2.0 mA
0.9
1.5
V
Base saturation voltage
VBE(sat)*IC = 2.0 A, IB = 2.0 mA
1.5
2.0
V
Turn-on time
ton
0.5
s
Storage time
tstg
2.5
s
Fall time
tf
IC = 2.0 A, IB1 =
IB2 = 2.0 mA
RL = 25
, VCC 50 V
Refer to the test circuit.
0.6
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE1
2,000 to 5,000
4,000 to 10,000
8,000 to 20,000
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
Electrode Connection
1. Base
2. Collector
3. Emitter
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2223F12 | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SOT-346 |
| 2SC2223F13 | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SOT-346 |
| 2SC2223F14 | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SOT-346 |
| 2SC2223-T1B | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
| 2SC2223-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN Transistor, 20V, 0.02A, MINI MOLD 制造商:Renesas 功能描述:0 |
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