- 您现在的位置：买卖IC网 > PDF目录33359 > 2SC2236-Y 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC2236-Y |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TO-92MOD, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 110K |
| 代理商： | 2SC2236-Y |
2SC2236
2004-07-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2236
Audio Power Amplifier Applications
Complementary to 2SA966 and 3-watt output applications.
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1.5
A
Base current
IB
0.15
A
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 30 V, IE = 0
―
100
nA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
30
―
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 1 mA, IC = 0
5
―
V
DC current gain
hFE
(Note)
VCE = 2 V, IC = 500 mA
100
―
320
Collector-emitter saturation voltage
VCE (sat)
IC = 1.5 A, IB = 0.03 A
―
2.0
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 500 mA
―
1.0
V
Transition frequency
fT
VCE = 2 V, IC = 500 mA
―
120
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
30
pF
Note: hFE classification O: 100 to 200, Y: 160 to 320
Unit: mm
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC2236 | 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC2237 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 2SC2240 | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC2240-GR | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC2240 | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2236-Y(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 30V 1.5A 3-Pin LSTM Bulk |
| 2SC2236-Y(TE6,F,M) | 功能描述:两极晶体管 - BJT Transistor NPN, 30V, 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC2236-Y(TPE6,F) | 功能描述:两极晶体管 - BJT NPN 30V 1.5A 900mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC2237 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) |
| 2SC2238 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
发布紧急采购，3分钟左右您将得到回复。