参数资料
型号: 2SC2308C
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: TO-92(1), 3 PIN
文件页数: 2/6页
文件大小: 41K
代理商: 2SC2308C
2SJ356
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
IDSS
VDS = –60 V, VGS = 0
–10
A
Gate Leakage Current
IGSS
VGS = –16/+10 V, VDS = 0
±10
A
Gate Cut-Off Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
–1.4
–2.0
V
Forward Transfer Admittance
|yfs|VDS = –10 V, ID = –1.0 A
1.0
S
Drain to Source On-State Resistance
RDS(on)1
VGS = –4 V, ID = –1.0 A
0.65
0.95
Drain to Source On-State Resistance
RDS(on)2
VGS = –10 V, ID = –1.0 A
0.41
0.50
Input Capacitance
Ciss
VDS = –10 V, VGS = 0,
270
pF
Output Capacitance
Coss
f = 1.0 MHz
145
pF
Reverse Transfer Capacitance
Crss
55
pF
Turn-On Delay Time
td(on)
VDD = –25 V, ID = –1.0 A
4.3
ns
Rise Time
tr
VGS(on) = –10 V
21
ns
Turn-Off Delay Time
td(off)
RG = 10
, RL = 25
115
ns
Fall Time
tf
75
ns
Gate Input Charge
QG
VDS = –48 V,
11.6
nC
Gate to Source Charge
QGS
VGS = –10 V,
1.0
nC
Gate to Drain Charge
QGD
ID = –2.0 A, IG = –2 mA
3.8
nC
Internal Diode Reverse Recovery Time
trr
IF = 2.0 A,
82
ns
Internal Diode Reverse Recovery Charge
Qrr
di/dt = 50 A/
s
94
nC
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT
-
Derating
Factor
-%
25
100
80
60
40
20
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
ID
-
Drain
Current
-
A
–0.5
–10
VDS - Drain to Source Voltage - V
0
50
75
100
125
150
–5
–2
–1
–0.5
–0.2
–0.1
–0.05
Single pulse
–1
–100
–2
–5
–10
–20
–50
PW
=
100
ms
10
ms
1 ms
DC
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