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参数资料
| 型号： | 2SC2335-AZ |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 文件页数： | 2/6页 |
| 文件大小： | 118K |
| 代理商： | 2SC2335-AZ |
Data Sheet D14861EJ2V0DS
2
2SC2335
ELECTRICAL CHARACTERISTICS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = 3.0 A, IB1 = 0.6 A, L = 1 mH
400
V
Collector to emitter voltage
VCEX(SUS)1
IC = 3.0 A, IB1 =
IB2 = 0.6 A,
VBE(OFF) =
5.0 V, L = 180
H, clamped
450
V
Collector to emitter voltage
VCEX(SUS)2
IC = 6.0 A, IB1 = 2.0 A,
IB2 = 0.6 A,
VBE(OFF) =
5.0 V, L = 180
H, clamped
400
V
Collector cutoff current
ICBO
VCB = 400 V, IE = 0 A
10
A
Collector cutoff current
ICER
VCE = 400 V, RBE = 51
, TA = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE = 400 V, VBE(OFF) =
1.5 V
10
A
Collector cutoff current
ICEX2
VCE = 400 V, VBE(OFF) =
1.5 V,
TA = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0 A
10
A
DC current gain
hFE1
VCE = 5.0 V, IC = 0.1 A
Note
20
80
DC current gain
hFE2
VCE = 5.0 V, IC = 1.0 A
Note
20
80
DC current gain
hFE3
VCE = 5.0 V, IC = 3.0 A
Note
10
Collector saturation voltage
VCE(sat)
IC = 3.0 A, IB = 0.6 A
Note
1.0
V
Base saturation voltage
VBE(sat)
IC = 3.0 A, IB = 0.6 A
Note
1.2
V
Turn-on time
ton
1.0
s
Storage time
tstg
2.5
s
Fall time
tf
IC = 3.0 A, RL = 50
,
IB1 =
IB2 = 0.6 A, VCC 150 V
Refer to the test circuit.
1.0
s
Note Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
20 to 40
30 to 60
40 to 80
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2335-AZ(K) | 制造商:Renesas Electronics 功能描述:NPN Bulk |
| 2SC2335F | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SC2335K | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 7A I(C) | TO-220AB |
| 2SC2335L | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB |
| 2SC2335-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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