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参数资料
| 型号： | 2SC2404C |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 264K |
| 代理商： | 2SC2404C |
1
Transistors
Publication date: March 2003
SJC00114BED
2SC2404
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
Optimum for RF amplification of FM/AM radios
High transition frequency f
T
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
3V
Collector current
IC
15
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 030
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 03
V
Base-emitter voltage
VBE
VCB = 6 V, IE = 1 mA
0.72
V
Forward current transfer ratio *
hFE
VCB
= 6 V, I
E
= 1 mA
65
260
Transition frequency
fT
VCB = 6 V, IE = 1 mA, f = 100 MHz
450
650
MHz
Reverse transfer capacitance
Cre
VCB = 6 V, IE = 1 mA, f = 10.7 MHz
0.8
1.0
pF
(Common emitter)
Power gain
GP
VCB = 6 V, IE = 1 mA, f = 100 MHz
24
dB
Noise figure
NF
VCB
= 6 V, I
E
= 1 mA, f = 100 MHz
3.3
dB
Unit: mm
■ Electrical Characteristics T
a
= 25°C ± 3°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5
10
0
to
0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Marking Symbol: U
Rank
C
D
hFE
65 to 160
100 to 260
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2404D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 15MA I(C) | TO-236 |
| 2SC2405 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC2405/2SC2406 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SC2405. 2SC2406 - NPN Transistor |
| 2SC24050RL | 功能描述:TRANS NPN 35VCEO 50MA MINI-3P RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC2405R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 50MA I(C) | TO-236 |
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