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参数资料
| 型号： | 2SC2411KT146P |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SMT3, SC-59, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 85K |
| 代理商： | 2SC2411KT146P |
2SC2411K / 2SC4097 / 2SC1741S
Transistors
!Electrical characteristics
(Ta = 25
°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
40
32
5
82
250
6.0
1
390
0.4
VIC
= 100A
IC
= 1mA
IE
= 100A
VCB
= 20V
VEB
= 4V
VCE
= 3V, IC = 100mA
IC/IB
= 500mA/50mA
VCE
= 5V, IE = 20mA, f = 100MHz
VCB
= 10V, IE = 0A, f = 1MHz
V
A
120
560
V
MHz
pF
Typ.
Max.
Unit
Conditions
2SC2411K, 2SC4097
2SC1741S
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
!Packaging Specifications and hFE
T146
T106
3000
TP
5000
PQR
hFE
PQR
2SC2411K
2SC4097
QRS
2SC1741S
Type
Package
Code
Taping
Basic ordering unit (pieces)
hFE values are classified as follows:
Item
P
Q
R
hFE
82
180
120
270
180
390
S
270
560
!Electrical characteristic curves
0.8
0.2
0.4
0.9
0.7
0.5
1.1
0.3
1.0
0.6
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
Ta
=100°C
25°C
80
°C
25
°C
55°C
VCE
=6V
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1
Grounded emitter propagation
characteristics
1
0
2345
0
100
50
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB
=0A
Ta
=25
°C
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.2
Grounded emitter output
characteristics(
Ι)
1
0
2345
0
500
400
300
200
100
2mA
1.8mA
1.6mA
1.4mA
1.2mA
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
IB
=0A
Ta
=25
°C
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.3
Grounded emitter output
characteristics(
ΙΙ)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4097T106P | 500 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2412KLNT147/RE | 150 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2412KT146/R | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2412KT146/S | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC1740STP/R | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2411KT146Q | 功能描述:两极晶体管 - BJT NPN 32V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC2411KT146Q/R | 制造商:ROHM Semiconductor 功能描述:Transistor, NPN, Driver, 32V, 500mA, SM |
| 2SC2411KT146R | 功能描述:两极晶体管 - BJT NPN 32V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC2411KXLT1 | 制造商:WILLAS 制造商全称:WILLAS 功能描述:Medium Power Transistor |
| 2SC2411-P | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN Silicon Epitaxial Transistors |
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