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参数资料
| 型号： | 2SC2412 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 187K |
| 代理商： | 2SC2412 |
2SC2412-R
NPN Silicon
Epitaxial Transistors
Features
Power Dissipation: 0.2W (TA=25 )
Collector Current: 0.15A
Collector-base Voltage: 60V
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
50
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current
0.15
A
PC
Collector power dissipation
0.2
W
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
VCEO
Collector-Emitter Voltage
(IC=1.0mAdc, IB=0)
50
---
Vdc
VCBO
Collector-Base Voltage
(IC=50uAdc, IE=0)
60
---
Vdc
VEBO
Emitter-Base Voltage
(IE=50uAdc, IC=0)
7.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=60Vdc,IE=0)
---
0.1
uAdc
IEBO
Emitter Cutoff Current
(VEB=7.0Vdc, IC=0)
---
0.1
uAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC=1.0mAdc, VCE=6.0Vdc)
120
---
560
---
VCE(sat)
Collector Saturation Voltage
(IC=50mAdc, IB=5.0mAdc)
---
0.4
Vdc
fT
Transition Frequency
(VCE=12Vdc, IC=2.0mAdc,
f=100MHz)
150
---
MHz
CLASSIFICATION OF hFE
Rank
Q
R
S
Range
120-270
180-390
270-560
Marking
BQ
BR
BS
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: A
2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
E
B
C
2SC2412-Q
2SC2412-S
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
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PDF描述 |
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| 2SC2412-S | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2412-S-TP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2412-TP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2412R | 1500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2413KT146Q | 50 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2412_0712 | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
| 2SC2412_11 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Epitaxial Planar Transistor |
| 2SC2412AK | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUB:2SC2412K |
| 2SC2412K | 制造商:ROHM Semiconductor 功能描述: 制造商:ROHM Semiconductor 功能描述:Bipolar Junction Transistor, NPN Type, SOT-346 制造商:ROHM Semiconductor 功能描述:Bipolar Junction Transistor, NPN Type, SOT-23 制造商:Thomson Consumer Electronics 功能描述:Bipolar Junction Transistor, NPN Type, SOT-23 |
| 2SC2412K ROHM | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANS. SC-59A 2S 50V .1A .2W ECB SURFACE MOUNT |
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