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参数资料
| 型号： | 2SC2412KT146/R |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SMT3, SC-59, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 115K |
| 代理商： | 2SC2412KT146/R |
2SC2412K / 2SC4081 / 2SC4617 /
Transistors
2SC5658 / 2SC1740S
Rev.A
2/3
Electrical characteristics (Ta=25
°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
60
50
7
120
180
2
0.1
560
0.4
3.5
VIC=50
A
IC=1mA
IE=50
A
VCB=60V
VEB=7V
VCE=6V, IC=1mA
IC/IB=50mA/5mA
VCE=12V, IE=
2mA, f=100MHz
VCE=12V, IE=0A, f=1MHz
V
A
V
MHz
pF
Typ.
Max.
Unit
Conditions
Transition frequency
Packaging specifications and hFE
Package
Code
Taping
Basic ordering
unit (pieces)
T146
T106
3000
QRS
hFE
QRS
2SC2412K
2SC4081
TL
3000
T2L
8000
QRS
2SC4617
TP
5000
QRS
2SC5658
QRS
2SC1740S
Type
hFE values are classified as follows :
Item
Q
R
S
hFE
120 to 270
180 to 390
270 to 560
Electrical characterristic curves
Fig.1
Grounded emitter propagation
characteristics
0
0.1
0.2
0.5
2
20
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
5
10
Ta
=
100
°C
VCE
=6V
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
25
°C
55
°C
Fig.2
Grounded emitter output
characteristics (
Ι )
0
20
40
60
80
100
0.4
0.8
1.2
1.6
2.0
0
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25
°C
IB=0A
0.40mA
0.50mA
0.45mA
0
2
8
10
4
8
12
16
4
6
20
IB=0A
Ta=25
°C
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
3
A
6
A
9
A
12
A
15
A
18
A
21
A
24
A
27
A
30
A
Fig.3
Grounded emitter output
characteristics (
ΙΙ )
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC2412KT146/S | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC1740STP/R | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4617TL/S | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4081T106/Q | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4081T106/R | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2412KT146S | 功能描述:两极晶体管 - BJT NPN 50V 0.15A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC2412KT147Q | 制造商:ROHM Semiconductor 功能描述: 制造商:ROHM Semiconductor 功能描述:150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2412KT246R | 功能描述:两极晶体管 - BJT NPN 50V 0.15A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC2412KT246S | 制造商:ROHM SEMICONDUCTOR 功能描述:GEN PUR NPN TRANS 50V, 0.15A 3P TR |
| 2SC2412KXLT1 | 制造商:WILLAS 制造商全称:WILLAS 功能描述:General Purpose Transistors |
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