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参数资料
| 型号： | 2SC2412KT146/S |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SMT3, SC-59, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 115K |
| 代理商： | 2SC2412KT146/S |
2SC2412K / 2SC4081 / 2SC4617 /
Transistors
2SC5658 / 2SC1740S
Rev.A
3/3
0.2
20
10
0.5 1
2
5
10 20
50 100 200
50
100
200
500
VCE=5V
3V
1V
Ta=25
°C
Fig.4 DC current gain vs.
collector current (
Ι )
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(mA)
0.2
0.5
1
2
5
10 20
50 100 200
20
10
50
100
200
500
25
°C
55°C
Ta=100
°C
VCE=
5V
Fig.5 DC current gain vs.
collector current (
ΙΙ )
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
0.2
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50 100 200
IC/IB=50
20
10
Ta=25
°C
Fig.7 Collector-emitter saturation
voltage vs. collector current (
Ι )
0.2
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50 100 200
IC/IB=10
Ta=100
°C
25
°C
55°C
Fig.8 Collector-emitter saturation
voltage vs. collector current (
ΙΙ)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(mA)
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1
2
5
10
20
50 100
IC/IB=50
Ta=100
°C
25
°C
55°C
Fig.9 Gain bandwidth product vs.
emitter current
50
0.5 1
2
5 10 20
50 100
100
200
500
Ta=25
°C
VCE
=6V
EMITTER CURRENT : IE
(mA)
TRANSITION
FREQUENCY
:
f
T
(MHz)
Fig.10
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : VCB
(V)
EMITTER TO BASE VOLTAGE
: VEB
(V)
COLLECTOR
OUTPUT
CAPACITANCE
:Cob
(
pF)
EMITTER
INPUT
CAPACITANCE
:Cib
(
pF)
0.2
0.5
1
2
5
10
20
50
1
2
5
10
20
Cob
Ta=25
°C
f
=1MHz
IE
=0A
IC
=0A
Cib
Fig.11 Base-collector time constant
vs. emitter current
0.2
0.5
1
2
5
10
BASE
COLLECTOR
TIME
CONSTANT
:
Ccr
bb'
(ps)
EMITTER CURRENT : IE
(mA)
10
20
50
100
200
Ta=25
°C
f=32MHZ
VCB=6V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2412KT147Q | 制造商:ROHM Semiconductor 功能描述: 制造商:ROHM Semiconductor 功能描述:150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2412KT246R | 功能描述:两极晶体管 - BJT NPN 50V 0.15A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC2412KT246S | 制造商:ROHM SEMICONDUCTOR 功能描述:GEN PUR NPN TRANS 50V, 0.15A 3P TR |
| 2SC2412KXLT1 | 制造商:WILLAS 制造商全称:WILLAS 功能描述:General Purpose Transistors |
| 2SC2412MPT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:General Purpose Transistor |
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