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参数资料
| 型号： | 2SC2458(L)-BL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-4E1A, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 656K |
| 代理商： | 2SC2458(L)-BL |
2SC2458(L)
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2458(L)
Audio Amplifier Applications
Low Noise Audio Amplifier Applications
High current capability: IC = 150 mA (max)
High DC current gain: hFE = 70~700
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Low noise: NF (2) = 0.2dB (typ.), 3dB (max)
Complementary to 2SA1048 (L).
Small package.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
50
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE
(Note)
VCE = 6 V, IC = 2 mA
70
700
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2.0
3.5
pF
NF (1)
VCE = 6 V, IC = 0.1 mA, f = 100 Hz,
RG = 10 kΩ
0.5
6
Noise figure
NF (2)
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
RG = 10 kΩ
0.2
3
dB
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC2458(L)-Y | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2462-D | SMALL SIGNAL TRANSISTOR |
| 2SC2463-E | SMALL SIGNAL TRANSISTOR |
| 2SC2463-F | SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2458L-BL(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SC2458LGR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK |
| 2SC2458L-GR | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Audio Amplifier Applications |
| 2SC2458L-GR(F,T) | 功能描述:两极晶体管 - BJT ELECTRONIC COMPONENT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC2458LO | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK |
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