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参数资料
| 型号： | 2SC2462C |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPAK-3 |
| 文件页数： | 3/7页 |
| 文件大小： | 38K |
| 代理商： | 2SC2462C |
2SC5012
3
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
-
Total
Power
Disspation
-
mW
TA - Ambient Temperature - C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
IC
-
Collector
Current
-
mA
50
VBE - Base to Emitter Voltage - V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
IC
-
Collector
Current
-
mA
30
VCE - Collector to Emitter Voltage - V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
h
FE
-
DC
Current
Gain
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
fT
-
Gain
Bandwidth
Product
-
GHz
IC - Collector Current - mA
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
|S
21e
|2
-
Insertion
Power
Gain
-
dB
1
IC - Collector Current - mA
200
100
50
100
150
0
0.5
1.0
0
40
30
20
10
VCE = 8 V
20
10
2
8
12
0
500
200
1
100
10
20
50
10
100
VCE = 8 V
10
8
1
6
0
2
4
5
10
50
100
VCE = 8 V
f = 1 GHz
20
0
10
5
10
50
100
VCE = 8 V
f = 1 GHz
4
6
10
2
A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
20 A
IB = 200
180
2
20
A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC2462 | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2462D | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2462D | SMALL SIGNAL TRANSISTOR |
| 2SC2462-C | SMALL SIGNAL TRANSISTOR |
| 2SC2462-B | SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2462D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 100MA I(C) | SOT-23 |
| 2SC2462LBTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC2462-LC(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SC2462LCTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC2462LDTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
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