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参数资料
| 型号： | 2SC2462D |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 封装： | MPAK-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 23K |
| 代理商： | 2SC2462D |
2SC2462
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
40
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
100
mA
Emitter current
I
E
–100
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
50
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
40
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.5
AV
CB = 30 V, IE = 0
Emitter cutoff current
I
EBO
—
0.5
AV
EB = 2 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
500
V
CE = 12 V, IC = 2 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
0.2
V
I
C = 10 mA, IB = 1 mA
Base to emitter voltage
V
BE
—
0.75
V
CE = 12 V, IC = 2 mA
Note:
1. The 2SC2462 is grouped by h
FE as follows.
Grade
B
C
D
Mark
LB
LC
LD
h
FE
100 to 200
160 to 320
250 to 500
See characteristic curves of 2SC458 (LG).
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC2462-C | SMALL SIGNAL TRANSISTOR |
| 2SC2462-B | SMALL SIGNAL TRANSISTOR |
| 2SC2463-E | SMALL SIGNAL TRANSISTOR |
| 2SC2463D | SMALL SIGNAL TRANSISTOR |
| 2SC2463-F | SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2462LBTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC2462-LC(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SC2462LCTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC2462LDTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC2463 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANS. SC-5955V .1A .15W ECB SURFACE MOUNT |
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