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参数资料
| 型号： | 2SC2463F |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPAK-3 |
| 文件页数： | 4/7页 |
| 文件大小： | 38K |
| 代理商： | 2SC2463F |
2SC2463
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
55
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
100
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
55
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
—
V
I
C = 1 mA, RBE =
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.5
A
V
CB = 30 V, IE = 0
Emitter cutoff current
I
EBO
—
0.5
A
V
EB = 2 V, IC = 0
DC current transfer ratio
h
FE*
1
250
—
1200
V
CE = 12 V, IC = 2 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
0.5
V
I
C = 10 mA, IB = 1 mA
Base to emitter voltage
V
BE
—
0.75
V
CE = 12 V, IC = 2 mA
Note:
1. The 2SC2463 is grouped by h
FE as follows.
Grade
D
E
F
Mark
DD
DE
DF
h
FE
250 to 500
400 to 800
600 to 1200
See characteristic curves of 2SC1345.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC2463D | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2463E | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2500-ATPE6 | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2500-CTPE6 | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2500-BTPE6 | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2464 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON NPN EPITAXIAL UHF AMPLIFIER |
| 2SC2466 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON NPN EPITAXIAL UHF AMPLIFIER |
| 2SC2468 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON NPN EPITAXIAL UHF AMPLIFIER |
| 2SC2469 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON NPN EPITAXIAL UHF AMPLIFIER |
| 2SC2471 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANS. TO-9230V .05A .31W BEC |
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