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参数资料
| 型号： | 2SC2497 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon NPN epitaxial planar type(For low-frequency power amplification) |
| 中文描述： | 1.5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封装： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 248K |
| 代理商： | 2SC2497 |
Power Transistors
1
Publication date: January 2003
SJD00099BED
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SA1096, 2SC1096A
■ Features
High collector-emitter voltage (Base open) V
CEO
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
70
V
Collector-emitter voltage 2SC2497
VCEO
50
V
(Base open)
2SC2497A
60
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1.5
A
Peak collector current
ICP
3A
Collector power dissipation
PC
1.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 1 mA, IE = 070
V
Collector-emitter voltage
2SC2497
VCEO
IC
= 2 mA, I
B
= 050
V
(Base open)
2SC2497A
60
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 01
A
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 10 V, I
B
= 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 010
A
Forward current transfer ratio *
1, 2
hFE
VCE = 5 V, IC = 1 A
80
220
Collector-emitter saturation voltage
VCE(sat)
IC
= 1.5 A, I
B
= 0.15 A
1
V
Base-emitter saturation voltage
VBE(sat)
IC = 1.5 A, IB = 0.15 A
1.5
V
Transition frequency
fT
VCB = 5 V, IE = 0.5 A, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
35
pF
(Common base, input open circuited)
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1
1.76±0.1
123
φ 3.16±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE
80 to 160
120 to 220
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2497/2SC2497A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SC2497. 2SC2497A - NPN Transistor |
| 2SC24970Q | 功能描述:TRANS NPN 50VCEO 1.5A TO-126 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC24970R | 功能描述:TRANS NPN 50VCEO 1.5A TO-126 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC2497A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC2497AP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-126 |
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