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参数资料
| 型号： | 2SC2497S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1.5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126B |
| 封装： | TO-126B, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 65K |
| 代理商： | 2SC2497S |
Power Transistors
2
2SC2497, 2SC2497A
VBE(sat) IC
hFE IC
fT IE
PC Ta
IC VCE
VCE(sat) IC
Cob VCB
VCER RBE
ICBO Ta
0
6
5
4
3
2
1
0
40
80
120
160
(1)With a 100
×100×2mm
Al heat sink
(2)Without heat sink
(1)
(2)
Ambient temperature T
a
(C)
Collector
power
dissipation
P
C
(W
)
0
1.0
3.0
2.0
4.0
3.5
2.5
1.5
0.5
012
210
48
6
TC=25C
45mA
40mA
30mA
35mA
20mA
25mA
10mA
5mA
15mA
IB=50mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
0.01
0.03
0.1
0.3
1
3
10
0.01
0.03
0.1
0.3
1
3
IC/IB=10
–25C
25C
TC=100C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.01
0.03
0.01
1
0.1
0.03
0.3
0.1
0.3
1
3
10
3
IC/IB=10
TC=–25C
25C
100C
Collector current I
C
(A)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
0.01
3
1
0.1
0.03
0.3
1
3
10
30
100
300
1000
VCE=5V
TC=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
–0.01 –0.03
–0.1
–0.3
–1
–3
–10
0
240
200
160
120
80
40
VCB=5V
f=200MHz
TC=25C
Emitter current I
E
(A)
Transition
frequency
f
T
(MHz
)
0
1
240
200
160
120
80
40
3
10
30
100
IE=0
f=1MHz
TC=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
0.1
0.3
1
3
10
30
100
0
20
40
60
80
100
10
30
50
70
90
IC=10mA
TC=25C
Base to emitter resistance R
BE
(k
)
Collector
to
emitter
voltage
V
CER
(V
)
1
10
102
103
104
180
140
100
60
20
0
40
80
120
160
VCB=40V
Ambient temperature T
a
(C)
I CBO
(T
a
)
I CBO
(T
a
=25
C
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2498 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TRANSISTOR (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATION) |
| 2SC2498(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC2499 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOS. TRANS. TO-92 20V .03A .3W BEC |
| 2SC2500 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) |
| 2SC2500_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) |
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