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参数资料
| 型号： | 2SC2551 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | 2-5F1B, SC-43, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 147K |
| 代理商： | 2SC2551 |
2SC2551
2003-03-25
1
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC2551
Hight Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
High voltage: VCBO = 300 V, VCEO = 300 V
Low saturation voltage: VCE (sat) = 0.5 V (max)
Small collector output capacitance: Cob = 3 pF (typ.)
Complementary to 2SA1091.
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
100
mA
Base current
IB
20
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55~150
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 300 V, IE = 0
0.1
mA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.1
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 0.1 mA, IE = 0
300
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 1 mA, IB = 0
300
V
hFE (1)
(Note)
VCE = 10 V, IC = 20 mA
30
150
DC current gain
hFE (2)
VCE = 10 V, IC = 1 mA
20
Collector-emitter saturation voltage
VCE (sat)
IC = 20 mA, IB = 2 mA
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 20 mA, IB = 2 mA
50
1.2
V
Transition frequency
fT
VCE = 10 V, IC = 20 mA
80
MHz
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
3
4
pF
Note: hFE (1) classification R: 30~90, O: 50~150
Industrial Applications
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
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PDF描述 |
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| 2SC2553 | 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC2638 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 2SC2555 | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 2SC2395 | Si, NPN, RF POWER TRANSISTOR |
| 2SC2562 | 5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2551_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) |
| 2SC2551O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SC2551-O | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC2551-O(F) | 制造商:Toshiba 功能描述:NPN 300V 0.1A 50 to 150 TO92 Bulk |
| 2SC2551-O(TPE2,F) | 制造商:Toshiba America Electronic Components 功能描述:Semi,Descrete,Transistor |
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