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参数资料
| 型号： | 2SC2563 |
| 英文描述： | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 8A I(C) | SIP |
| 中文描述： | 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 8A条一（c）|园区 |
| 文件页数： | 6/8页 |
| 文件大小： | 39K |
| 代理商： | 2SC2563 |
2SC2545, 2SC2546, 2SC2547
6
0.5
2
1
10
20
5
100
50
1.0
2
5
10
Collector to Base Voltage V
CB
(V)
C
o
Collector Output Capacitance vs.
Collector to Base Voltage
20
50
I
= 0
f = 1 MHz
0.01
0.1
0.03
0.3
1.0
3
10
Collector Current I
C
(mA)
S
g
)
Contours of Constant Noise Figure
30
100
NF = 0.5 dB
1
2
4
6
10
V
= 6 V
f = 1 kHz
0.1
0.03
0.01
1.0
10
3
0.3
100
30
0.01
0.1
0.1
0.03
0.01
3
1.0
10
0.3
100
30
0.03
0.3
1.0
3
10
Collector Current I
C
(mA)
S
g
)
Contours of Constant Noise Figure
30
100
NF = 0.5 dB
1
2
4
V
= 6 V
f = 120 Hz
6
10
0.01
0.1
0.1
0.03
0.01
3
1.0
10
0.3
100
30
0.03
0.3
1.0
3
10
Collector Current I
C
(mA)
S
g
)
Contours of Constant Noise Figure
30
100
NF = 0.5 dB
V
= 6 V
f = 10 Hz
1 2
6 10
4
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PDF描述 |
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| 2SC2582R | TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 1A I(C) | TO-126 |
| 2SC2582S | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC2590P | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | TO-126 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2564 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC2565 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SC2565 |
| 2SC2568 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR TO-126 300V .2A 10W ECB |
| 2SC2570 | 制造商:Panasonic Industrial Company 功能描述:DISCD TRANSISTOR SUBBING WITH 2SC2570A |
| 2SC2570A | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
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