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参数资料
| 型号： | 2SC2712-Y-TP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 242K |
| 代理商： | 2SC2712-Y-TP |
2SC2712-O
NPN
Plastic-Encapsulate
Transistors
Features
Complementary to 2SA1162
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
50
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current
150
mA
PC
Collector power dissipation
150
mW
TJ
Junction Temperature
-55 to +150
TSTG
Storage Temperature
-55 to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
ICBO
Collector Cutoff Current
(VCB=60Vdc,IE=0)
---
0.1
A
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
---
0.1
A
ON CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
Voltage
(IC=1mA, IB=0)
50
---
V
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100
A, IE=0)
60
---
V
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100
A, IC=0)
5.0
---
V
hF
DC Current Gain*
(IC=2mAdc, VCE=6.0Vdc)
70
---
700
---
VCE(sat)
Collector Saturation Voltage*
(IC=-100mAdc, IB=10mAdc)
---
0.1
0.25
V
Cob
Output Capacitance
(VCB=10V, IE=0, f=1MHz)
---
2.0
3.5
pF
fT
Gain Bandwidth product
(VCE=10Vdc, IC=1mAdc)
80
---
MHz
NF
Noise Figure
VCE=6V, IC=0.1mA, f=1KHz, Rg=10K
)
---
1.0
10
dB
CLASSIFICATION OF hFE
Rank
O
Y
GR
BL
Range
70-140
120-240
200-400
350-700
Marking
LO
LY
LG
LL
omponents
20736 Marilla Street Chatsworth
!"#
$% !"#
MCC
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
Revision: A
2011/01/01
TM
Micro Commercial Components
E
B
C
www.mccsemi.com
1 of 3
2SC2712-Y
2SC2712-GR
2SC2712-BL
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC2712-Y | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2712 | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2712-GR | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2713 | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SC2713-BL | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2713-BL(T5LSUMF | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC2713-BL(TE85L) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC2713-BL(TE85L,F | 制造商:Toshiba 功能描述:NPN |
| 2SC2713-BL(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor |
| 2SC2713-BL,LF | 功能描述:TRANS NPN 120V 0.1A S-MINI 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:100mA 电压 - 集射极击穿（最大值）:120V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:300mV @ 1mA，10mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:350 @ 2mA，6V 功率 - 最大值:150mW 频率 - 跃迁:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:TO-236 标准包装:1 |
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