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参数资料
| 型号： | 2SC2712G-L-AL3-R |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | HALOGEN FREE PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 201K |
| 代理商： | 2SC2712G-L-AL3-R |
2SC2712
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-029.E
ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise stated)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
150
mA
Base Current
IB
30
mA
Collector Power Dissipation
PC
150
mW
Junction Temperature
TJ
+125
°С
Storage Temperature
TSTG
-55 ~ +125
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-off Current
ICBO
VCB=60V, IE=0
0.1
μA
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
0.1
μA
DC Current Gain
hFE
VCE=6V, IC=2mA
70
700
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=100mA, IB=10mA
0.1
0.25
V
Transistor Frequency
fT
VCE=10V, IC=1mA
80
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
2.0
3.5
pF
Noise Figure
NF
VCE=6V, IC=0.1mA
f=1kHz, Rg=10K
1.0
10
dB
CLASSIFICATION OF hFE
RANK
Y
G
L
RANGE
120~240
200~400
350~700
相关PDF资料 |
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| 2SC2712G-Y-AL3-R | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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| 2SC2712L-G-AL3-R | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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