2SC2715
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2715
High Frequency Amplifier Applications
High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz)
Recommended for FM IF, OSC stage and AM CONV. IF stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
50
mA
Base current
IB
10
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 35 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 4 V, IC = 0
1.0
μA
DC current gain
hFE
(Note)
VCE = 12 V, IC = 2 mA
40
240
Collector-emitter saturation voltage
VCE (sat)
IC = 10 mA, IB = 1 mA
0.4
V
Base-emitter voltage
VBE
IC = 10 mA, IB = 1 mA
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
100
400
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2.0
3.2
pF
Collector-base time constant
Ccrbb’
VCE = 10 V, IE = 1 mA, f = 30 MHz
50
ps
Power gain
Gpe
VCC = 6 V, IE = 1 mA, f = 10.7 MHz
(Figure 1)
27
30
33
dB
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Unit: mm
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
USM