参数资料
型号: 2SC2721-LA
元件分类: 小信号晶体管
英文描述: 700 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
文件页数: 1/6页
文件大小: 107K
代理商: 2SC2721-LA
1998
Document No. D16149EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SC2721
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Complementary transistor with 2SA1154
High PT in small dimension and high voltage
PT = 1 W, VCEO = 60 V
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
5.0
V
Collector current (DC)
IC(DC)
0.7
A
Collector current (pulse)
IC(pulse)*1.0
A
Total power dissipation
PT
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
100
nA
DC current gain
hFE1
VCE = 1.0 V, IC = 0.1 A *
90
200
400
DC current gain
hFE2
VCE = 1.0 V, IC = 0.5 A *
50
150
DC base voltage
VBE
VCE = 6.0 V, IC = 10 mA
600
635
700
mV
Collector saturation voltage
VCE(sat)
IC = 0.5 A, IB = 50 mA *
0.12
0.35
V
Base saturation voltage
VBE(sat)
IC = 0.5 A, IB = 50 mA *
0.90
1.2
V
Output capacitance
Cob
VCB = 6.0 V, IE = 0, f = 1.0 MHz
13
pF
Gain bandwidth product
fT
VCE = 6.0 V, IE =
10 mA
110
MHz
Turn-on time
ton
60
ns
Storage temperature
tstg
600
ns
Turn-off time
toff
Refer to the test circuit.
650
ns
* Pulse test PW
≤ 350
s, duty cycle ≤ 2% per pulsed
hFE CLASSIFICATION
Marking
MA
LA
KA
hFE1
90 to 180
135 to 270
200 to 400
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