1998
Document No. D16149EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SC2721
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
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FEATURES
Complementary transistor with 2SA1154
High PT in small dimension and high voltage
PT = 1 W, VCEO = 60 V
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
5.0
V
Collector current (DC)
IC(DC)
0.7
A
Collector current (pulse)
IC(pulse)*1.0
A
Total power dissipation
PT
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
100
nA
DC current gain
hFE1
VCE = 1.0 V, IC = 0.1 A *
90
200
400
DC current gain
hFE2
VCE = 1.0 V, IC = 0.5 A *
50
150
DC base voltage
VBE
VCE = 6.0 V, IC = 10 mA
600
635
700
mV
Collector saturation voltage
VCE(sat)
IC = 0.5 A, IB = 50 mA *
0.12
0.35
V
Base saturation voltage
VBE(sat)
IC = 0.5 A, IB = 50 mA *
0.90
1.2
V
Output capacitance
Cob
VCB = 6.0 V, IE = 0, f = 1.0 MHz
13
pF
Gain bandwidth product
fT
VCE = 6.0 V, IE =
10 mA
110
MHz
Turn-on time
ton
60
ns
Storage temperature
tstg
600
ns
Turn-off time
toff
Refer to the test circuit.
650
ns
* Pulse test PW
≤ 350
s, duty cycle ≤ 2% per pulsed
hFE CLASSIFICATION
Marking
MA
LA
KA
hFE1
90 to 180
135 to 270
200 to 400