参数资料
型号: 2SC2782A
元件分类: 功率晶体管
英文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封装: 2-13C1A, 6 PIN
文件页数: 1/4页
文件大小: 160K
代理商: 2SC2782A
2SC2782A
2007-11-01
1
TOSHIBA Transistor Silicon Npn Epitaxial Planar Type
2SC2782A
VHF Band Power Amplifier Applications
Output Power
: Po = 80W (Min.)
(f = 175MHz, VCC = 12.5V, Pi = 18W)
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
36
V
Collector-Emitter Voltage
VCEO
16
V
Emitter-Base Voltage
VEBO
4
V
Collector Current
IC
20
A
Collector Power Dissipation
PC
220
W
Junction Temperature
Tj
175
°C
Storage Temperature Range
Tstg
65~175
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
Dot
Lot No.
JEDEC
EIAJ
TOSHIBA
213C1A
Weight: 5.5g (typ.)
Unit in mm
2SC2782
TOSHIBA
JAPAN
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