参数资料
型号: 2SC2885
元件分类: 小信号晶体管
英文描述: 2000 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: MP-3, 3 PIN
文件页数: 4/5页
文件大小: 204K
代理商: 2SC2885
Data Sheet D16187EJ1V0DS
2
2SC3569
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = 0.5 A, IB1 = 0.1 A, L = 1 mH
400
V
Collector to emitter voltage
VCEX(SUS)1
IC = 0.5 A, IB1 =
IB2 = 0.1 A,
L = 180
H, clamped
450
V
Collector to emitter voltage
VCEX(SUS)2
IC = 1.0 A, IB1 = 0.2 A,
IB2 = 0.1 A,
L = 180
H, clamped
400
V
Collector cutoff current
ICBO
VCB = 400 V, IE = 0
10
A
Collector cutoff current
ICER
VCE = 400 V, RBE = 51
, Ta = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE = 400 V, VBE(OFF) =
1.5 V
10
A
Collector cutoff current
ICEX2
VCE = 400 V, VBE(OFF) =
1.5 V,
Ta = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
10
A
DC current gain
hFE1*VCE = 5.0 V, IC = 0.2 A
20
80
DC current gain
hFE2*VCE = 5.0 V, IC = 0.5 A
10
Collector saturation voltage
VCE(sat)*IC = 0.7 A, IB = 0.14 A
1.0
V
Base saturation voltage
VBE(sat)*IC = 0.7 A, IB = 0.14 A
1.2
V
Turn-on time
ton
1.0
s
Storage time
tstg
2.5
s
Fall time
tf
IC = 0.7 A, RL = 214
,
IB1 =
IB2 = 0.14 A, VCC 150 V
Refer to the test circuit.
1.0
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
HFE1
20 to 40
30 to 60
40 to 80
TYPICAL CHARACTERISTICS (Ta = 25
°°°°C)
To
ta
lP
o
we
rDis
s
ip
a
ti
o
n
P
T
(W
)
Collector to Emitter Voltage VCE (V)
Co
lle
c
to
rCu
rr
e
n
t
IC
(
m
A)
Case Temperature TC (
°C)
相关PDF资料
PDF描述
2SC2946(1)-N 2000 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC2946-M 2000 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC2946(1)-L 2000 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC2946-L 2000 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC2946-K 2000 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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