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参数资料
| 型号： | 2SC2922G |
| 厂商： | SANKEN ELECTRIC CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 17 A, 180 V, NPN, Si, POWER TRANSISTOR |
| 封装： | MT-200, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 28K |
| 代理商： | 2SC2922G |
62
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216)
Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
180
5
17
5
200(Tc=25°C)
150
–55 to +150
Unit
V
A
W
°C
sAbsolute maximum ratings
sElectrical Characteristics
sTypical Switching Characteristics (Common Emitter)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Ratings
100max
180min
30min
2.0max
50typ
250typ
Unit
A
V
MHz
pF
Conditions
VCB=180V
VEB=5V
IC=25mA
VCE=4V, IC=8V
IC=8A, IB=0.8A
VCE=12V, IE=–2A
VCB=10V, f=1MHz
VCC
(V)
40
RL
(
)
4
IC
(A)
10
VB2
(V)
–5
IB2
(A)
–1
ton
(
s)
0.2typ
tstg
(
s)
1.3typ
tf
(
s)
0.45typ
IB1
(A)
1
LAPT
2SC2922
(Ta=25°C)
I C– V CE Characteristics (Typical)
h FE– I C Characteristics (Typical)
h FE– I C Temperature Characteristics (Typical)
θj-a–t Characteristics
I C– V BE Temperature Characteristics (Typical)
V CE(sat) – I B Characteristics (Typical)
Pc – T a Derating
Safe Operating Area (Single Pulse)
f T– I E Characteristics (Typical)
0
3
2
1
0
0.2
0.4
0.6
1.0
0.8
Base Current I B(A)
Collector-Emitter
Saturation
Voltage
V
CE(sat)
(V)
I C=10A
5A
0
17
15
10
5
0
2
2.4
1
Base-Emittor Voltage V BE(V)
Collector
Current
I
C
(A)
(V CE=4V)
125C
(Case
Temp)
25C
–30C
(Case
Temp)
200
160
120
80
40
5
0
2 5
5 0
7 5
100
125
150
Ambient Temperature Ta(C)
Maximum
Power
Dissipation
P
C
(W)
With
Infinite
heatsink
Without Heatsink
2
1 0
100
300
0.2
1
0.5
10
50
5
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
Without Heatsink
Natural Cooling
DC
10ms
0.02
0.1
1
1 0
5
0.5
17
10
50
100
200
Collector Current I C(A)
DC
Current
Gain
h
FE
(V CE=4V)
Typ
0
5
17
15
10
2
13
4
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
600mA
700mA
1A
500mA
400mA
300mA
200mA
100mA
50mA
I B=20mA
1.5A
(V CE=4V)
0.02
0.5
1
5
10
0.1
17
Collector Current I C(A)
DC
Current
Gain
h
FE
125C
25C
–30C
10
50
100
200
–0.02
–0.1
–1
–5
–10
0
40
60
20
80
Cut-off
Frequency
f
T
(MH
Z
)
(V CE=12V)
Emitter Current I E(A)
Typ
1
1 0
100
1000
2000
Time t(ms)
0.1
1
2
0.5
Transient
Thermal
Resistance
θ
j-a
(C/W)
2
3
1.05
+0.2
-0.1
BE
5.45±0.1
2-3.2±0.1
36.4±0.3
9
24.4±0.2
7
21.4
±0.3
20.0min
4.0max
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0±0.2
2.1
a
b
C
External Dimensions MT-200
Weight : Approx 18.4g
a. Part No.
b. Lot No.
hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2922Y | 制造商:Allegro MicroSystems 功能描述:TRANSISTOR NPN MT-200 制造商:Allegro MicroSystems 功能描述:TRANSISTOR, NPN, MT-200 制造商:Allegro MicroSystems 功能描述:TRANSISTOR, NPN, MT-200; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:180V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:200W; DC Collector Current:17A; DC Current Gain hFE:50; No. of Pins:3 ;RoHS Compliant: Yes |
| 2SC2923 | 制造商:Panasonic Industrial Company 功能描述:X'STOR |
| 2SC29250SA | 功能描述:TRANS NPN 50VCEO 700MA TO-92 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC2926 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANSISTOR TO-92 30V .05A .3W ECB |
| 2SC2926S | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SPT30V .05A .3W ECB |
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