- 您现在的位置：买卖IC网 > PDF目录49925 > 2SC2982D 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC2982D |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, SC-62, 2-5K1A, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 158K |
| 代理商： | 2SC2982D |
2SC2982
2006-11-10
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2982
Storobo Flash Applications
Medium Power Amplifier Applications
High DC current gain and excellent linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)
Low saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SA1314
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
VCES
30
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
6
V
DC
IC
2
Collector current
Pulse (Note 1)
ICP
4
A
DC
IB
0.4
Base current
Pulse (Note 1)
IBP
0.8
A
PC
500
Collector power dissipation
PC
(Note 2)
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: 2SC2982 mounted on a ceramic substrate (250 mm
2 × 0.8 t)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC2982 | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2982A | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2995-O | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC2996 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SC2999E | HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2983 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR SC 160V 1.5A 20W BCE |
| 2SC2983-Y(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 160V 1.5A PW-MOLD |
| 2SC2986 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9240V .05A .3W ECB |
| 2SC2987 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC2988 | 功能描述:TRANS NPN HF 16VCEO .5A TO-126 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
发布紧急采购，3分钟左右您将得到回复。