
2SC3072
2006-11-09
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3072
Strobe Flash Applications
Medium Power Amplifier Applications
High DC current gain
: hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A)
: hFE = 70 (min) (VCE = 2 V, IC = 4 A)
Low collector saturation voltage
: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
High power dissipation
: PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
VCES
40
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
8
V
DC
IC
5
Collector current
Pulse
(Note 1)
ICP
8
A
Base current
IB
0.5
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)