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参数资料
| 型号： | 2SC3074-O |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-7B1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 205K |
| 代理商： | 2SC3074-O |
2SC3074
2006-11-09
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
High Current Switching Applications
Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)
High speed switching time: tstg = 1.0 s (typ)
Complementary to 2SA1244
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
5
A
Base current
IB
1
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
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| 2SC3074 | 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3074-O(Q) | 功能描述:两极晶体管 - BJT NPN 60V 5A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3074Y | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 50V 5A 3-Pin(3+Tab) PW-Mold 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC3074-Y | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High Current Switching Applications |
| 2SC3074-Y(Q) | 功能描述:两极晶体管 - BJT NPN 60V 5A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3074-Y(T6L1,NQ) | 功能描述:两极晶体管 - BJT NPN PWR 60V VCBO 50V VCEO 5V VEBO RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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