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参数资料
| 型号： | 2SC3074-Y |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-7B1A, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 205K |
| 代理商： | 2SC3074-Y |
2SJ449
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD
-
Diode
Forward
Current
-
A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
1.0
–0.1
0
–50
0.5
1.0
1.5
0
50
100
150
ID = –3 A
0.1
0
1
10
100
0.5
Pulsed
10
–1.0
100
1 000
10 000
–10
–100
–1 000
VGS = 0
f = 1 MHz
10
100
1 000
–1.0
–10
–100
V
GS
-
Gate
to
Source
Voltage
-
V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
ID - Drain Current - A
trr
-
Reverse
Recovery
time
-
ns
di/dt = 50 A/ s
VGS = 0
1.0
0.1
10
100
1000
1.0
10
100
1.0
1.5
2.0
VDD = –125 V
VGS = –10 V
RG = 10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Qg - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
10
20
30
40
-100
-200
-300
-400
ID = –6 A
–5
–10
–15
–20
VGS = –10 V
Crss
Coss
Ciss
tr
td(on)
tf
td(off)
0
VDD = –200 V
–125 V
–50 V
VGS = 0 V
10 V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3083M | 6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SC3083N | 6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SC3083L | 6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SC3089M | 7 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SC3089-M | 7 A, 500 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3074-Y(Q) | 功能描述:两极晶体管 - BJT NPN 60V 5A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3074-Y(T6L1,NQ) | 功能描述:两极晶体管 - BJT NPN PWR 60V VCBO 50V VCEO 5V VEBO RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3075 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC3075(LBSTA1) | 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SC3075(Q) | 制造商:Toshiba 功能描述:NPN 400V 0.8A 20 to 100 PW-Mold Bulk |
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