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参数资料
| 型号： | 2SC3113-B |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-4E1A, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 466K |
| 代理商： | 2SC3113-B |
2SC3113
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3113
For Audio Amplifier and Switching Applications
High DC current gain: hFE = 600~3600
High breakdown voltage: VCEO = 50 V
High collector current: IC = 150 mA (max)
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE
(Note)
VCE = 6 V, IC = 2 mA
600
3600
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.12
0.25
V
Transition frequency
fT
VCE = 10 V, IC = 10 mA
100
250
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
NF (1)
VCE = 6 V, IC = 0.1 mA, f = 100 Hz,
RG = 10 kΩ
0.5
Noise figure
NF (2)
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
RG = 10 kΩ
0.3
dB
Note: hFE classification A: 600~1800, B: 1200~3600
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3113-B(F) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SC3114 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-92 60V .15A .4W ECB |
| 2SC3114R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TO-92 Plastic Package Transistors (NPN) |
| 2SC3114S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TO-92 Plastic Package Transistors (NPN) |
| 2SC3114T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TO-92 Plastic Package Transistors (NPN) |
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