- 您现在的位置：买卖IC网 > PDF目录33373 > 2SC3127 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC3127 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | MPAK-3 |
| 文件页数： | 4/10页 |
| 文件大小： | 43K |
| 代理商： | 2SC3127 |
2SC3127, 2SC3128, 2SC3510
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
——V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
12
——V
I
C = 1 mA, RBE = ∞
Emitter cutoff current
I
EBO
——
10
AV
EB = 3 V, IC = 0
Collector cutoff current
I
CBO
—
0.5
AV
CB = 12 V, IE = 0
DC current transfer ratio
h
FE
30
90
200
V
CE = 5 V, IC = 20 mA
Collector output capacitance
Cob
—
0.9
1.5
pF
V
CB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
f
T
3.5
4.5
—
GHz
V
CE = 5 V, IC = 20 mA
Power gain
PG
—
10.5
—
dB
V
CE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
2.2
—
dB
V
CE = 5 V, IC = 5 mA,
f = 900 MHz
Maximum Collector Dissipation Curve
600
400
200
0
50
100
150
200
Ambient Temperature Ta (
°C)
Collector
Power
Dissipation
Pc
(mW)
2SC3510
2SC3128
2SC3127
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
1
2
5
10
20
50
100
0
40
80
120
160
200
DC
Current
Transfer
Ratio
h
FE
VCE = 5 V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3515-O | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3515TE12L | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3515RTE12R | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3515TE12R | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3515OTE12R | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3127ID-TL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC3128 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-92 20V .05A .35W BEC |
| 2SC312AF | 制造商:SIL 功能描述:2SC312AF TO92 N9H1D |
| 2SC313 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:Silicon NPN Transistor VHF-UHF Amplifier, Mixer/Osc |
发布紧急采购，3分钟左右您将得到回复。