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参数资料
| 型号： | 2SC3130P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | MINI3-G1, SC-59, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 112K |
| 代理商： | 2SC3130P |
2SC3130
2
SJC00125BED
VCE(sat) IC
hFE IC
fT IE
PC Ta
IC VCE
IC VBE
Cob VCB
0
160
40
120
80
0
200
160
120
80
40
Collector
power
dissipation
P
C
(mW
)
Ambient temperature T
a (°C)
012
10
8
26
4
0
80
60
20
40
Ta
= 25°C
400
A
300
A
200
A
100
A
IB
= 500 A
Collector
current
I
C
(mA
)
Collector-emitter voltage V
CE (V)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
VCE
= 4 V
Ta
= 75°C
25°C
25
°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(mA
)
0.1
1
10
100
0.01
0.1
1
10
100
IC / IB
= 10
Ta
= 75°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
0.1
1
10
100
0
360
300
240
180
120
60
VCE
= 4 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
0.1
1
10
100
0
4
3
1
2
VCB
= 4 V
Ta
= 25°C
Transition
frequency
f
T
(GHz
)
Emitter current I
E (mA)
1
10
100
0
1.6
1.2
0.4
0.8
IE
= 0
f
= 1 MHz
Ta
= 25°C
Collector-base voltage V
CB (V)
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3130Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | TO-236 |
| 2SC3130R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | TO-236 |
| 2SC3133 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| 2SC3134 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-5960V .15A .2W ECB SUFACE MT |
| 2SC3134-4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23 |
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