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参数资料
| 型号： | 2SC3133 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 6 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 63K |
| 代理商： | 2SC3133 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 10 mA
25
V
BVCBO
IC = 5.0 mA
60
V
BVEBO
IE = 1.0 mA
5.0
V
ICBO
VCB = 30 V
500
A
IEBO
VEB = 4.0 V
500
A
hFE
VCE = 12 V
IC = 10 mA
10
50
180
---
PO
η
C
VCC = 12 V
PIN = 0.5 W
f = 27 MHz
13
60
16
70
dB
%
NPN SILICON RF POWER TRANSISTOR
2SC3133
DESCRIPTION:
The
ASI 2SC3133 is Designed for RF
Power amplifiers in HF band mobile radio
Applications.
MAXIMUM RATINGS
IC
6.0 A
VCE
25 V
VCB
60 V
PDISS
20 W @ TC = 25 °C
TSTG
-65 °C to +150 °C
θ
JC
6.25 °C/W
PACKAGE STYLE TO-220AB (COMMON EMITTER)
1 = BASE
2 = EMITTER
3 = COLLECTOR
TAB = EMITTER
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