- 您现在的位置：买卖IC网 > PDF目录41490 > 2SC3134-7 (SANYO SEMICONDUCTOR CO LTD) 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC3134-7 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 35K |
| 代理商： | 2SC3134-7 |
2SA1252 / 2SC3134
No.1048-1/4
Features
High VEBO.
Wide ASO and high durability against breakdown.
Specifications ( ) : 2SA1252
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)60
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)15
V
Collector Current
IC
(--)150
mA
Collector Current (Pulse)
ICP
(--)300
mA
Collector Dissipation
PC
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)0.1
A
Emitter Cutoff Current
IEBO
VEB=(--)10V, IC=0A
(--)0.1
A
DC Current Gain
hFE
VCE=(--)6V, IC=(--)1mA
90*
600*
Gain-Bandwidth Product
fT
VCE=(--)6V, IC=(--)1mA
100
MHz
Output Capacitance
Cob
VCB=(--)6V, f=1MHz
(3.5)2.2
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)50mA, IB=(--)5mA
(--)0.5
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10A, IE=0A
(--)60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10A, IC=0A
(--)15
V
Marking: 2SA1252:D
2SC3134: H
* : The 2SA1252 / 2SC3134 are classified by 1mA hFE as follws:
Rank
4
5
6
7
hFE
90 to 180
135 to 270
200 to 400
300 to 600
Ordering number : EN1048D
72606 / 31006CA MS IM 8-4698 / 70502TN (KT) / 71598HA (KT) / 3187AT / 3155MW, TS
2SA1252 / 2SC3134
PNP / NPN Epitaxial Planar Silicon Transistors
High VEBO, AF Amp Applications
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3134 | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1252-7 | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3134-6 | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1252 | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1252-5 | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3135 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR SPA60V .2A .25W |
| 2SC3135R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SPAK |
| 2SC3135S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SPAK |
| 2SC3135T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SPAK |
| 2SC3135U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SPAK |
发布紧急采购，3分钟左右您将得到回复。