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参数资料
| 型号： | 2SC3149-T60-K |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.5 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封装： | TO-126, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 124K |
| 代理商： | 2SC3149-T60-K |
2SC3149
Preliminary
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 2
www.unisonic.com.tw
QW-R204-024.a
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
1200
V
Collector-emitter voltage
VCEO
800
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
IC
0.5
A
Collector Dissipation
PC
2
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=1mA, IE=0A
1200
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=5mA, IB=0A
800
V
Emitter-Base Breakdown Voltage
BVEBO
IE=1mA, IC=0A
7
V
Collector Cutoff Current
ICBO
VCB=800V, IE=0A
10
μA
Emitter Cutoff Current
IEBO
VEB=5V, IC=0A
10
μA
DC Current Gain (Note)
hFE
IC=100mA, VCE=5V
10
40
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=200mA, IB=40mA
0.8
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=200mA, IB=40mA
1.5
V
Current Gain Bandwidth Product
fT
IC=100mA, VCE=10V
15
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
30
pF
Turn-On Time
tON
1.0
μs
Storage Time
tSTG
3.0
μs
Fall Time
tF
IC=1A, IB1=0.2A, IB2=-0.4A,
RL=400, VCC=400V
0.7
μs
Note: Pulse test: Pulse width=300μs, Duty Cycle≦2%
CLASSIFICATION OF hFE
RANK
K
L
M
RANGE
10 ~ 20
15 ~ 30
20 ~ 40
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3151K | 1.5 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SC3151-K | 1.5 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC3151M | 1.5 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SC3151K | 1.5 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SC3151-L | 1.5 A, 800 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3150 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR (86I 制造商:TT Electronics / Semelab 功能描述:NPN power transistor,2SC3150 3A |
| 2SC3150K | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SC3150L | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SC3150M | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SC3151 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-3PB 900V 1.5A 60W BCE |
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