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参数资料
| 型号： | 2SC3255-Q |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 36K |
| 代理商： | 2SC3255-Q |
2SA1291 / 2SC3255
No.1201-1/4
Applications
Various inductance lamp drivers for electrical equipment.
Inverters, converters (flash, fluorescent lamp lighting circuit).
Power amp (high power car stereo, motor controller).
High-speed switching (switching regulator, driver).
Features
Low saturation voltage.
Excellent current dependence of hFE.
Short switching time.
Specifications ( ) : 2SA1291
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)80
V
Collector-to-Emitter Voltage
VCEO
(--)60
V
Emitter-to-Base Voltage
VEBO
(--)5
V
Collector Current
IC
(--)10
A
Collector Current (Pulse)
ICP
(--)12
A
Collector Dissipation
PC
1.75
W
Tc=25
°C40
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
mA
DC Current Gain
hFE
VCE=(--)2V, IC=(--)1A
70*
280*
Continued on next page.
* : The 2SA1291/2SC3255 are classified by 1A hFE as follows :
Rank
Q
R
S
hFE
70 to 140
100 to 200
140 to 280
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN1201E
83006 MS IM TC-00000111 / 72006FA MS IM TC-00000018 / 73102TN (KT) / 71598HA (KT) / D251MH / D151MH (KOTO)
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SA1291 / 2SC3255
PNP / NPN Epitaxial Planar Silicon Transistors
60V / 10A High-Speed Switching
Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3255-S | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SA1291-Q | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SA1291 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SC3255R | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC3255 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3255R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-220AB |
| 2SC3255S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-220AB |
| 2SC3256 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:60V/15A High-Speed Switching Applications |
| 2SC3256Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 15A I(C) | TO-218VAR |
| 2SC3256R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 15A I(C) | TO-218VAR |
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